Method of forming insulating film

  • Inventors: SEKI YUKO
  • Assignees: Nec Corp
  • Publication Date: November 06, 1992
  • Publication Number: JP-H04315431-A

Abstract

PURPOSE: To form an partial insulating film easily and safely on any substrate. CONSTITUTION: Liquid 5 for silicon oxide film formation, wherein rhodamine 6G6 absorbing a laser beam 1A is dissolved, is applied on the surface of a silicon substrate 7, which has exposed wiring, and the substrate 7 is fixed to the XY stage 8 within a growth chamber 12. The silicon substrate 7 is shifted by the XY stage 8, while observing it with an eyepiece 11, so that the laser beam 1A from an Ar laser 1 may be applied the part requiring formation of a silicon oxide film, and then the laser beam 1A is applied, whereby the applied part is heated and an oxide film is made, and then the silicon substrate 7 is cleaned with fluoric acid in low concentration, whereby a silicon oxide film can partially be made. COPYRIGHT: (C)1992,JPO&Japio

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