Gallium nitride base compound semiconductor light-emitting device

Abstract

PURPOSE: To attain the increase in light-emitting intensity, the decline in driving voltage and the approach of light emitting wavelength to that of blue color in the light emitting diode of GaN base compound semiconductor. CONSTITUTION: Within the title gallium nitride base compound semiconductor having an n layer 4 comprising an n type gallium base nitride compound semiconductor (containing (Al x Ga 1-x N:X=0) and an i layer 5 comprising i type gallium nitride base compound semiconductor containing (Al x Ga 1-x N:X=0), the requirements of the i layer 250-1000Å thick, the light-emitting intensity of 50mcd, the driving voltage of 6.5-8.5V and the light emitting wavelength of 480-790nm can be fulfilled. COPYRIGHT: (C)1992,JPO&Japio

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (3)

    Publication numberPublication dateAssigneeTitle
    JP-H0745867-AFebruary 14, 1995Nichia Chem Ind Ltd, 日亜化学工業株式会社n型窒化ガリウム系化合物半導体層の電極
    US-5652438-AJuly 29, 1997Toyoda Gosei Co., Ltd.Light-emitting semiconductor device using group III nitride compound
    US-8934513-B2January 13, 2015Rohm Co., Ltd.Semiconductor light emitting device and manufacturing method therefor