Amorphous ferroelectric oxide material and its production

Abstract

PURPOSE: To provide a noncrystaline (amorphous) ferroelectric oxide material applicable to thin-film type capacitor elements, ferroelectric memories, electrooptical devices, etc., and a method for producing the aforementioned material. CONSTITUTION: An amorphous ferroelectric oxide material is characterized in that the above-mentioned material is composed of a ternary oxide consisting essentially of a transition metallic oxide (M 2 O 3 )-silicon oxide (SiO 2 )-perovskite type compound (ABO 3 ) and the aforementioned ternary oxide has an amorphous structure (M 2 O 3 is at least one selected from the group composed of oxides of Sc, Ti, V, Cr, Mn, Co, Fe, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanum-series elements; ABO 3 is the perovskite type compound capable of exhibiting ferroelectricity, antiferroelectricity or paraelectricity). COPYRIGHT: (C)1992,JPO&Japio

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