Method of forming a patterned tungsten damascene interconnect

Abstract

A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole.

Claims

What is claimed is: 1 . A method for forming a semiconductor device comprising: providing a semiconductor substrate; forming an insulating film having a opening; forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface; plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. 2 . A method for forming a semiconductor device as claimed in claim 1 , further comprising: annealing the titanium nitride with ammonia; forming a tungsten film on the titanium nitride; and etching back the tungsten film so as to bury in the opening. 3 . A method for forming a semiconductor device as claimed in claim 2 , wherein the annealing has a condition that gas flow rate of the ammonia is 3000 [sccm], a pressure is 1000 [pa], a wafer temperature is 650[° C.], and a time is 20 [sec]. 4 . A method for forming a semiconductor device as claimed in claim 3 , wherein the tungsten film forming processes have first and second CVD. 5 . A method for forming a semiconductor device as claimed in claim 4 , wherein the first CVD has a condition that gases are tungsten hexafluoride and silane, gas flow rates are 20 [sccm] for tungsten hexafluoride and 10 [sccm] for silane, a pressure is 500 [pa], a wafer temperature is 500[> C.], a thickness is 25 [nm]. 6 . A method for forming a semiconductor device as claimed in claim 4 , wherein the second CVD has a condition that gases are tungsten hexafluoride and hydrogen, gas flow rates are 90 [sccm] for tungsten hexafluoride and 1000 [sccm] for hydrogen, a pressure is 10000 [pa], a wafer temperature is 500[° C.], and a thickness is 500 [nm]. 7 . A method for forming a semiconductor device as claimed in claim 1 , further comprising: annealing the titanium nitride with ammonia; forming a tungsten film on the titanium nitride; and forming a tungsten interconnection by patterning the tungsten film. 8 . A method for forming a semiconductor device as claimed in claim 7 , wherein the annealing has a condition that gas flow rate of the ammonia is 3000 [sccm], a pressure is 1000 [pa], a wafer temperature is 650[° C.], and a time is 20 [sec]. 9 . A method for forming a semiconductor device as claimed in claim 7 , wherein the tungsten film forming processes have first and second CVD. 10 . A method for forming a semiconductor device as claimed in claim 9 , wherein the first CVD has a condition that gases are tungsten hexafluoride and silane, gas flow rates are 20 [sccm] for tungsten hexafluoride and 10 [sccm] for silane, a pressure is 500 [pa], a wafer temperature is 500[° C.], a thickness is 25 [nm]. 11 . A method for forming a semiconductor device as claimed in claim 9 , wherein the second CVD has a condition that gases are tungsten hexafluoride and hydrogen, gas flow rates are 90 [sccm] for tungsten hexafluoride and 1000 [sccm] for hydrogen, a pressure is 10000 [pa], a wafer temperature is 500[° C.], and a thickness is 500 [nm]. 12 . A method for forming a semiconductor device as claimed in claim 1 , wherein the titanium film forming has a condition that gases are titanium tetrachloride and hydrogen, gas flow rates are 5 [sccm] for tetrachloride and 1500 [sccm] for hydrogen, pressure is 500 [pa], wafer temperature is 650[° C.], thickness is 20 [nm], and a given power is 450 [W]. 13 . A method for forming a semiconductor device as claimed in claim 1 , wherein the plasma treating has a condition that gas flow rate are 1000-2000 [sccm] for hydrogen and 400-600 [sccm] for nitrogen, a pressure is 500 [pa], a wafer temperature is 650[° C.], a thickness is 20 [nm], and a given power is 400-500 [W]. 14 . A method for forming a semiconductor device as claimed in claim 1 , wherein the titanium nitride film forming has a condition that gases are titanium tetrachloride and ammonia, gas flow rates are 30-50 [sccm] for titanium tetrachloride and 300-500 [sccm] for ammonia, a pressure is 70 [pa], a wafer temperature is 650[° C.], and a thickness is 20 [nm].
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention generally relates to a method for forming a semiconductor device, and more particularly, the present invention relates to a method for forming titanium and titanium nitride for using as adhesion layer. [0003] This application is a counterpart of Japanese application Serial Number 14439/2000, filed Jan. 24, 2000, the subject matter of which is incorporated herein by reference. [0004] 2. Description of the Related Art [0005] In general, as high-integration advances, tungsten interconnection utilized tungsten has been a focus of constant attention because step coverage is fine. [0006] [0006]FIG. 1A through FIG. 1D are cross-sectional views showing a method for forming a semiconductor device according to a conventional art. As shown in FIG. 1A, an insulating film 2 having a contact hole 3 is formed on a silicon substrate 1 . A part of the silicon substrate 1 is exposed from the contact hole 3 . [0007] As shown in FIG. 1B, using CVD (Chemical Vapor Deposition) technique, a titanium film 4 is formed on the insulating film 2 and the exposed silicon substrate 1 surface. Here, the CVD technique is carried out introducing titanium tetrachloride and hydrogen gas. Then, the titanium film 4 is treated with nitrogen plasma ion. Therefore, the nitrogen plasma ion is generated using ammonia, and the titanium film 4 reacts with the nitrogen plasma ion. Then, a titanium nitride film 5 is formed on the plasma treated titanium film 4 using the CVD technique. Here, the CVD technique is carried out introducing titanium tetrachloride and ammonia gas. [0008] As shown in FIG. 1C, for decreasing low resistance, the titanium nitride film 5 is annealed in the atmosphere of ammonia. Then, a tungsten film 6 is formed on the annealed titanium nitride film 5 . Then, the tungsten film 6 is etched back. As a result, the tungsten film 6 is buried in the contact hole 3 . [0009] As described above, the plasma treating of ammonia is carried to increase adhesion between the titanium film 4 and a titanium nitride film. [0010] However, since the plasma treating of ammonia has a high nitriding speed for titanium, the titanium film is completely converted the titanium nitride film. Besides, the silicon substrate 1 surface under the titanium film is also nitridized. Therefore, a silicon nitride is formed on the silicon substrate 1 surface. As a result, a contact resistance of the tungsten interconnection in a contact hole, is increased. [0011] It is desired to decrease a contact resistance of the tungsten interconnection in a contact hole. SUMMARY OF THE INVENTION [0012] An object of the present invention is to provide a method for forming a semiconductor device that can decrease a contact resistance of the tungsten interconnection in a contact hole. [0013] According to one aspect of the present invention, for achieving the above object, there is provided a method for forming a semiconductor device comprising: providing a semiconductor substrate; forming an insulating film having a opening; forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface; plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. BRIEF DESCRIPTION OF THE DRAWINGS [0014] While the specification concludes with claims particularly pointing out and distinctly claiming the subject matter that is regarded as the invention, the invention, along with the objects, features, and advantages thereof, will be better understood from the following description taken in connection with the accompanying drawings, in which: [0015] [0015]FIG. 1A through FIG. 1D are cross-sectional views showing a method for forming a semiconductor device according to a conventional art. [0016] [0016]FIG. 2A through FIG. 2D are cross-sectional views showing a method for forming a semiconductor device according to a preferred embodiment of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0017] A prober and a method for forming the same according to a preferred embodiment of the present invention will hereinafter be described in detail with reference to the accompanying drawings. [0018] [0018]FIG. 2A through FIG. 2D are cross-sectional views showing a method for forming a semiconductor device according to a preferred embodiment of the invention. [0019] As shown in FIG. 2A, an insulating film 12 is formed on an N type silicon substrate 11 . For example, the insulating film 12 having a thickness of 1.0 μm is SiO 2 film. The N type silicon substrate 11 has an impurity concentration of 5×10 15 cm −2 . [0020] Then, a contact hole 13 is formed in the insulating film 12 on a predetermined portion of the SiO 2 film 13 , using the well-known photolithography technique. An opening diameter of the contact hole 13 is 0.2 μm. A part of the silicon substrate 11 is exposed from the contact hole 13 . [0021] As shown in FIG. 2B, using CVD (Chemical Vapor Deposition) technique, a titanium film 14 is formed on the insulating film 12 and the exposed silicon substrate 11 surface in the contact hole 13 . Here, conditions of the CVD are as follows. [0022] (1) Gases: titanium tetrachloride and hydrogen. [0023] (2) Gas flow rate: titanium tetrachloride: 5 [sccm], and hydrogen: 1500 [sccm]. [0024] (3) Pressure: 500 [pa]. [0025] (4) Wafer temperature: 650[° C.]. [0026] (5) Thickness: 20 [nm]. [0027] (6) Given power: 450 [W]. [0028] Then, the titanium film 14 is treated with nitrogen plasma ion. [0029] Here, conditions of the plasma treating are as follows. [0030] (1) Gases: hydrogen and nitrogen. [0031] (2) Gas flow rate: hydrogen: 1000-2000 [sccm] and nitrogen: 400-600 [sccm]. [0032] (3) Pressure: 500 [pa]. [0033] (4) Wafer temperature: 650[° C.]. [0034] (5) Thickness: 20 [nm]. [0035] (6) Given power: 400-500 [W]. [0036] Then, a titanium nitride film 15 is formed on the plasma treated titanium film 14 using the CVD technique. Here, conditions of the CVD are as follows. [0037] (1) Gases: titanium tetrachloride and ammonia. [0038] (2) Gas flow rate: titanium tetrachloride: 30-50 [sccm] and ammonia: 300-500 [sccm]. [0039] (3) Pressure: 70 [pa]. [0040] (4) Wafer temperature: 650[° C.]. [0041] (5) Thickness: 20 [nm]. [0042] As shown in FIG. 2C, for decreasing low resistance, the titanium nitride film 15 is annealed in the atmosphere of ammonia. [0043] Here, conditions of the annealing are as follows. [0044] (1) Gas flow rate: ammonia: 3000 [sccm]. [0045] (2) Pressure: 1000 [pa]. [0046] (3) Wafer temperature: 650[° C.]. [0047] (4) Time: 20 [sec]. [0048] Then, a tungsten film 16 is formed on the annealed titanium nitride film 15 . The tungsten film forming processes have first and second CVD. Here, conditions of the first and second CVD are as follows. [0049] First CVD: [0050] (1) Gases: tungsten hexafluoride and silane. [0051] (2) Gas flow rate: tungsten hexafluoride: 20 [sccm] and silane: 10 [sccm]. [0052] (3) Pressure: 500 [pa]. [0053] (4) Wafer temperature: 500[° C.]. [0054] (5) Thickness: 25 [nm]. [0055] Second CVD: [0056] (1) Gases: tungsten hexafluoride and hydrogen. [0057] (2) Gas flow rate: tungsten hexafluoride: 90 [sccm] and hydrogen: 1000 [sccm]. [0058] (3) Pressure: 10000 [pa]. [0059] (4) Wafer temperature: 500[° C.]. [0060] (5) Thickness: 500 [nm]. [0061] Then, the tungsten film 16 is etched back. As a result, the tungsten film 17 is buried in the contact hole 13 . [0062] The tungsten film forming process may be carried out without the etching back process. [0063] As mentioned above, the preferred embodiment of the invention is characterized as follows. [0064] First, to increase adhesion between the titanium film and a titanium nitride film, the plasma treating is carried out with a mixed gas of hydrogen and nitrogen. The mixed gas of hydrogen and nitrogen has a nitriding speed for titanium less than ammonia. As a result, the preferred embodiment of the invention can avoid the problem that the titanium film is completely converted the titanium nitride film, the silicon substrate 1 surface under the titanium film is also nitridized. [0065] Accordingly, the preferred embodiment of the invention can decrease a contact resistance of the tungsten interconnection in a contact hole. [0066] While the present invention has been described with reference to the illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to those skilled in the art on reference to this description. It is therefore contemplated that the appended claims will cover any such modifications or embodiments as fall within the true scope of the invention.

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (4)

    Publication numberPublication dateAssigneeTitle
    US-5591672-AJanuary 07, 1997Vanguard International Semiconductor CorporationAnnealing of titanium - titanium nitride in contact hole
    US-6051281-AApril 18, 2000Tokyo Electron LimitedMethod of forming a titanium film and a barrier metal film on a surface of a substrate through lamination
    US-6136690-AOctober 24, 2000Micron Technology, Inc.In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
    US-6309966-B1October 30, 2001Motorola, Inc., White Oak Semiconductor PartnershipApparatus and method of a low pressure, two-step nucleation tungsten deposition

NO-Patent Citations (0)

    Title

Cited By (4)

    Publication numberPublication dateAssigneeTitle
    US-2005179141-A1August 18, 2005Yun Ju-Young, Choi Gil-Heyun, Kim Byung-Hee, Jong-Myeong Lee, Seung-Gil Yang, Jung-Hun SeoMethods of forming metal interconnections of semiconductor devices by treating a barrier metal layer
    US-2008070405-A1March 20, 2008Park Jae-Hwa, Choi Gil-Heyun, Jong-Myeong Lee, Park Hee-SookMethods of forming metal wiring layers for semiconductor devices
    US-2008179645-A1July 31, 2008Fujitsu LimitedSemiconductor device and method of producing the same
    US-7384866-B2June 10, 2008Samsung Electronics Co., Ltd.Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer